Premium
18.2: Field Emission from Carbon Nanotubes Selectively Grown on Stainless Steel Using a‐Si Buffer Layer
Author(s) -
Lim Sung Hoon,
Kim Hong Sik,
Moon Jong Hyun,
Jang Jin,
Lee Choong Hun
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832392
Subject(s) - materials science , field electron emission , carbon nanotube , layer (electronics) , chemical vapor deposition , substrate (aquarium) , inductively coupled plasma , silicon , buffer (optical fiber) , deposition (geology) , amorphous solid , amorphous carbon , plasma , amorphous silicon , analytical chemistry (journal) , nanotechnology , chemical engineering , composite material , metallurgy , electron , chemistry , crystalline silicon , crystallography , chromatography , oceanography , computer science , engineering , biology , telecommunications , paleontology , quantum mechanics , physics , sediment , geology
We have developed a selective growth technique of carbon nanotubes (CNTs) on stainless steel (SS) using a patterned amorphous silicon (a‐Si) buffer layer by inductively coupled plasma enhanced chemical vapor deposition (ICP‐CVD). The deposition of a 30 nm thick a‐Si on SS gives a uniform growth of multi‐walled CNTs, aligned vertically to the substrate with an average diameter of 70 ∼ 200 nm and a length of ∼1 μm. The CNTs exhibited a turn‐on field of 0.9 V/μm, a current density of 1 mA/cm 2 at 3.5 V/μm and uniform electron emission