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P‐114: Novel Method for Designing TFT‐LCDs with High Aperture Ratio
Author(s) -
Jung SungMin,
Kim JuHan,
Park WooSang
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832362
Subject(s) - thin film transistor , liquid crystal display , aperture (computer memory) , materials science , electrode , disclination , dielectric , optoelectronics , pixel , substrate (aquarium) , line (geometry) , optics , transistor , electric field , voltage , electrical engineering , liquid crystal , physics , engineering , geometry , acoustics , oceanography , mathematics , quantum mechanics , geology
In this study, we have developed a new method to eliminate the disclination line in the vicinity of the pixel electrode, by removing the horizontal components of the lateral field between the pixel and gate bus line electrode for the conventional thin‐film transistor liquid crystal displays (TFT‐LCDs). The horizontal components of the lateral electric fields was removed by forming the dielectric bump with high dielectric constant between the pixel and the gate bus line electrode on the TFT substrate. By performing the 3‐dimensional simulation of the molecular director profiles of liquid crystals for the given complex structure, we were able to obtain about 10% large aperture ratio than that of the conventional TFT‐LCDs.