Premium
P‐81: Enhanced Efficiency of Red Organic Light‐Emitting Diodes by Using Partially Doping Method
Author(s) -
Han Jeong Whan,
Kim Byung Soo
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832329
Subject(s) - oled , doping , materials science , optoelectronics , exciton , diode , layer (electronics) , quenching (fluorescence) , optics , nanotechnology , fluorescence , physics , quantum mechanics
Red organic light‐emitting diodes (OLEDs) with dotted‐line doping layer (DLDL) structures or totally doping layer (TDL) structure are fabricated by ultra‐low pressure molecular beam deposition method. The structure of the OLEDs with DLDL structures studied is ITO/α‐NPD(40nm)/(Alq: DCJTB(3%)) n (30nm)/ Alq(30nm)/MgAg(150nm). Here, n is the DLDL number varying from 2 to 8. The red OLED with DLDL of 6 exhibits current efficiency up to 3.94Cd/A at 100Cd/m 2 , which is 46% increase compared to that of the red OLED with TDL structure. We attribute this enhancement to the fact that the charge carriers and the excitons are effectively trapped in the DLDLs and generate photons, and also distributed over the DLDL region, hence this decreases the quenching of emission exciton.