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P‐70: Active Matrix OLED Displays Using Simple Poly‐Si TFT Process
Author(s) -
Park Yong In,
Ahn Tae Jun,
Kim Sung Ki,
Park Jae Yong,
Yoo Juhn S.,
Kim Chang Yeon,
Kim Chang Dong
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832318
Subject(s) - amoled , thin film transistor , active matrix , fabrication , oled , materials science , optoelectronics , threshold voltage , transistor , diode , voltage , process (computing) , flat panel display , channel (broadcasting) , electrical engineering , nanotechnology , computer science , engineering , medicine , alternative medicine , layer (electronics) , pathology , operating system
We have suggested and developed a novel 6 photo‐mask process for the p‐channel poly‐Si thin film transistor TFT panel fabrication of active matrix organic light‐emitting diode AMOLED. By removing power line Vdd and bank photo process, we simplified the fabrication process from 8 to 6 mask steps. The p‐channel TFT fabricated by the 6 photo‐mask process had a field effect mobility of ∼80 cm 2 /Vsec, a sub‐threshold voltage swing of ∼0.3 V/dec., and a threshold voltage of ∼−2 V. Using the 6 photo‐mask process, we have successfully realized a 7‐inch WVGA 720×480 AMOLED panel, which is controlled by the voltage driving method.