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P‐14: Characteristics of Asymmetric Dual‐gate poly‐Si TFTs for Kink Current Reduction
Author(s) -
Lee MinCheol,
Park SooJeong,
Shin MoonYoung,
Han MinKoo
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832250
Subject(s) - materials science , optoelectronics , current (fluid) , reduction (mathematics) , saturation current , saturation (graph theory) , dual (grammatical number) , and gate , logic gate , electrical engineering , voltage , engineering , mathematics , art , geometry , literature , combinatorics
Poly‐Si TFTs with asymmetric dual‐gate which reduces the kink current has been proposed and fabricated. Under the high drain‐bias, the short gate finger may operate in the saturation mode while the long gate finger may operate in the linear mode. Our experiments show that the kink current at high drain‐bias is suppressed effectively.