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P‐13: ILD Inter‐layer Dielectric Engineering for Reduction of Self‐Heating Effect in Poly‐Si TFT
Author(s) -
Park SooJeong,
Moon KookChul,
You BongHyun,
Han MinKoo
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832249
Subject(s) - thin film transistor , materials science , oxide thin film transistor , optoelectronics , silicon nitride , degradation (telecommunications) , silicon , dielectric , layer (electronics) , nitride , thermal conductivity , transistor , reliability (semiconductor) , electronic engineering , power (physics) , composite material , electrical engineering , physics , quantum mechanics , voltage , engineering
We have fabricated TFT using the silicon nitride ILD Inter‐layer Dielectric and silicon oxide ILD in order to analyze the self‐heating effect. The degradation of poly‐Si TFT Thin Film Transistor was investigated under high power condition. The silicon nitride with large thermal conductivity for the ILD reduces the temperature of channel region so that the reliability of poly‐Si TFTs is considerably improved.