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12.2: Developing a New High‐Definition Photoresist for CRTs
Author(s) -
Swei Jason,
Talbot Jan B.
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832228
Subject(s) - photoresist , polyvinylpyrrolidone , materials science , crts , absorbance , photolithography , optics , optoelectronics , nanotechnology , chemistry , polymer chemistry , computer science , chromatography , physics , layer (electronics) , computer graphics (images)
A new photoresist activator, 4,4′‐diazidobiphenyl‐2,2′‐disodium disulfonate, was synthesized and mixed with polyvinylpyrrolidone PVP to produce a photoresist for CRT screens. This photoresist absorbs at 264 nm, compared to the currently used PVP/DAS 4,4′‐diazidostilbene‐2,2′‐disulfonic acid sodium salt photoresist which absorbs at 335 nm. The lower UV absorbance should reduce the diffraction effects of the UV light passing through the mask and allow for finer resolution deposits