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4.5: 200 dpi 4‐a‐Si:H TFTs Current‐Driven AM‐PLEDs
Author(s) -
Hong Yongtaek,
Nahm JeongYup,
Kanicki Jerzy
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832197
Subject(s) - thin film transistor , active matrix , materials science , optoelectronics , amorphous silicon , threshold voltage , current (fluid) , transistor , electrode , electronic circuit , silicon , amorphous solid , voltage , electrical engineering , nanotechnology , crystalline silicon , engineering , chemistry , layer (electronics) , organic chemistry
In this paper, for the first time, we report 200 dpi current‐driven active‐matrix organic polymer light‐emitting displays based on five‐terminal, four amorphous silicon thin‐film transistors TFTs pixel electrode circuits, which compensate for the threshold voltage shift of organic polymer light‐emitting devices and TFTs.