Premium
4.4: 200 dpi 3‐a‐Si:H TFTs Voltage‐Driven AM‐PLEDs
Author(s) -
Kim JooHan,
Kanicki Jerzy
Publication year - 2003
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1832196
Subject(s) - thin film transistor , brightness , optoelectronics , materials science , voltage , resistor , electrical engineering , engineering , nanotechnology , physics , optics , layer (electronics)
In this paper we describe opto‐electronic properties of 200 dpi 3‐a‐Si:H TFT voltage‐driven AM‐PLEDs. In this display design the output current level drifts induced by either process variations or device aging can be reduced by adjusting the driver a‐Si:H TFT operating point with the active resistor. Our first green lightemitting AM‐PLED prototype had brightness of 50 cd/m 2 and fill factor of about 45%.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom