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P‐56: Blue‐Emitting dc CaS:Pb Electroluminescent Device
Author(s) -
Kim Yong Shin,
Park SangHee Ko,
Cho KyoungIk,
Yun Sun Jin
Publication year - 2001
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1831977
Subject(s) - electroluminescence , materials science , optoelectronics , luminescence , luminous efficacy , layer (electronics) , atomic layer deposition , blue light , active layer , atomic layer epitaxy , nanotechnology , thin film transistor
A new dc TFEL device having a blue‐emitting CaS:Pb active layer and a ZnS barrier layer was fabricated using atomic layer deposition technique. This device shows the threshold voltage of 17 V, the maximum luminescence of 85 cd/m 2 at 46 V, and the luminous efficiency ranging from 0.36 to 0.12 lm/W.
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