P‐23: A High Performance MIM Device with Low Threshold Voltage and Perfect Symmetry | Zendy

Hong S. J. | Zendy; Han J. I. | Zendy; Kim C. | Zendy; Kim W. K. | Zendy; Kwak M. K. | Zendy; Park S. K. | Zendy; Lee C. J. | Zendy; Lee M. J. | Zendy; Chung K. S. | Zendy

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P‐23: A High Performance MIM Device with Low Threshold Voltage and Perfect Symmetry

Author(s) -

Hong S. J.,

Han J. I.,

Kim C.,

Kim W. K.,

Kwak M. K.,

Park S. K.,

Lee C. J.,

Lee M. J.,

Chung K. S.

Publication year - 2001

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.1831941

Subject(s) - threshold voltage , symmetry (geometry) , annealing (glass) , materials science , anodizing , optoelectronics , low voltage , voltage , high voltage , electrical engineering , composite material , mathematics , engineering , geometry , transistor , aluminium

The MIM device with very low threshold voltage and perfect symmetry was fabricated. The threshold voltage and the symmetry were 1.4 V and 1:1, respectively. A high performance MIM device was formed by newly developed processes based on our unique anodization and annealing treatment.

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