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P‐23: A High Performance MIM Device with Low Threshold Voltage and Perfect Symmetry
Author(s) -
Hong S. J.,
Han J. I.,
Kim C.,
Kim W. K.,
Kwak M. K.,
Park S. K.,
Lee C. J.,
Lee M. J.,
Chung K. S.
Publication year - 2001
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1831941
Subject(s) - threshold voltage , symmetry (geometry) , annealing (glass) , materials science , anodizing , optoelectronics , low voltage , voltage , high voltage , electrical engineering , composite material , mathematics , engineering , geometry , transistor , aluminium
The MIM device with very low threshold voltage and perfect symmetry was fabricated. The threshold voltage and the symmetry were 1.4 V and 1:1, respectively. A high performance MIM device was formed by newly developed processes based on our unique anodization and annealing treatment.