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P‐1: A New TFT‐LCD Panel Structure with High Aperture Ratio and Small Signal Delay by fabrication TFT in Line‐Crossover
Author(s) -
Park J. W.,
Lee M. C.,
Kim J. S.,
Kim C. H.,
Han M. K.
Publication year - 2001
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1831918
Subject(s) - thin film transistor , crossover , materials science , signal (programming language) , aperture (computer memory) , line (geometry) , capacitance , liquid crystal display , optoelectronics , computer science , physics , electrode , acoustics , nanotechnology , geometry , mathematics , layer (electronics) , quantum mechanics , artificial intelligence , programming language
We have proposed and fabricated a poly‐Si TFT integrated gate‐data line‐crossover structure in order to increase the aperture ratio and to reduce the signal delay. The poly‐Si TFT is integrated in the gate‐data line‐crossover without sacrificing the electrical characteristics so that the aperture ratio of the panel was improved by about 3% because the TFT is located under a metal line. We employ a low dielectric air‐gap between the gate‐data line crossover, which reduces the capacitance between the gate and the data lines, so that the signal delay of the data line is decreased significantly. The fabricated TFT was successfully operated, and the proposed structure reduces the delay time by about 9 times compared with the conventional panel that does not employ any air‐bridges.