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6.4: Active Matrix Amorphous Silicon Photo‐sensor Array for Flexible Substrate
Author(s) -
Won Sung Hwan,
Ryu Jai,
Hur Ji Ho,
Jang Jin,
Jang Gyu Jung,
Lee Cheor Woo,
Jung Suk Tae
Publication year - 2001
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1831913
Subject(s) - active matrix , amorphous silicon , thin film transistor , materials science , substrate (aquarium) , silicon , optoelectronics , amorphous solid , pixel , transistor , matrix (chemical analysis) , nanotechnology , optics , electrical engineering , crystalline silicon , composite material , engineering , chemistry , crystallography , physics , voltage , oceanography , layer (electronics) , geology
We developed an active matrix photo‐sensor of a 250 dpi for flexible substrate using hydrogenated amorphous silicon thin film transistor (a‐Si:H TFT) and photoconductor (PC). We fabricated a small prototype, having 260 × 256 pixels with a 100 μm pixel pitch at a maximum process temperature of 180 °C.