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20.1: Invited Paper : New Emitter Techniques for Field Emission Displays
Author(s) -
Kim J. M.,
Lee N. S.,
Chung D. S.,
Park S. H.,
Jin Y. W.,
Kang J. H.,
Choi Y. S.,
Kim H. Y.,
Yun M. J.,
Park N. S.,
Han I. T.,
Kim J. W.,
Jung J. E.,
You J. H.,
Lee C. G.,
Jo S. H.,
Choi K. S.,
Chi E. J.,
Lee S. J.,
Park H. G.
Publication year - 2001
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1831856
Subject(s) - triode , common emitter , field electron emission , video graphics array , field emission display , carbon nanotube , materials science , optoelectronics , field (mathematics) , nanotechnology , scalability , engineering physics , electrical engineering , engineering , computer science , physics , capacitor , electron , cmos , voltage , mathematics , quantum mechanics , database , pure mathematics
New emitter materials for field emission displays (FEDs) have emerged and some of them faded away. Recently, carbon nanotubes have attracted much attention as a new emitter material due to their excellent field emission characteristics. We have investigated several different structures of FEDs with carbon nanotube emitters: normal gate, remote gate, and under‐gate triode structures. The panels with these structures were fabricated to be a 15″ diagonal and VGA resolution. Their field emission characteristics, uniformity, and scalability are discussed in detail.