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56.2: A New Production of the Large size TFT‐panel by “LC‐Dropping Method”
Author(s) -
Yamada S.,
Kimura S.,
Sakai N.,
Yamada Y.,
Matsukawa H.,
Hisamitsu S.,
Egami N.,
Ueno K.,
Nagano H.
Publication year - 2001
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1831813
Subject(s) - thin film transistor , flat panel , production (economics) , computer science , materials science , nanotechnology , computer graphics (images) , layer (electronics) , economics , macroeconomics
Abstract We have been manufacturing the STN‐panel with an original “LC‐Dropping method” from 1984. LC‐Dropping method eliminates the hole (LC injection hole) which infuses LC in the cell. This paper presents the development of the “LC‐Dropping method” in order to manufacture the large size TFT‐panel. And we can reduce the injection time of the LC substantially.