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50.2: A Novel Poly‐Si TFTs with Selectively Doped Regions Fabricated by New Excimer Laser Annealing
Author(s) -
Lee M. C.,
Jeon J. H.,
Song I. H.,
Park K. C.,
Han M. K.
Publication year - 2001
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1831786
Subject(s) - materials science , excimer laser , optoelectronics , annealing (glass) , thin film transistor , doping , electric field , excimer , laser , nanotechnology , optics , composite material , physics , layer (electronics) , quantum mechanics
A novel poly‐Si TFT with selectively doped regions in the channel has proposed and successfully fabricated by a new excimer laser annealing method using pre‐patterned beam mask. The n‐channel new TFTs exhibit a high mobility exceeding 250cm 2 /V·. s and a low leakage current due to the large laterally grown grains and the reduced lateral electric field.