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P‐110: Organic TFT Using Polymerized Gate Insulators by Vapor‐Deposition Polymerization
Author(s) -
Pyo SangWoo,
Lee DongHyun,
Shim JaeHoon,
Kim YoungKwan
Publication year - 2004
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1831071
Subject(s) - materials science , thin film transistor , polyimide , optoelectronics , polymerization , thin film , organic semiconductor , gate dielectric , chemical vapor deposition , insulator (electricity) , layer (electronics) , transistor , composite material , electrical engineering , nanotechnology , polymer , voltage , engineering
In this paper, it was demonstrated that the organic thin‐film transistors were fabricated with the organic gate insulator with vapor deposition polymerization (VDP) processing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were clearly observed in the electrical output characteristics in our organic thin film transistors using the staggered‐inverted top‐contact structure. Field effect mobility, threshold voltage, and on‐off current ratio in 0.45 μm thick gate dielectric layer were about 0.5 cm 2 /Vs, −5 V, and 10 5 A/A, respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin‐coating process, where polyimide film was co‐deposited by high‐vacuum thermal evaporation from 6FDA and ODA followed by curing.