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LP‐6: Late‐News Poster: Plasma Treatment for Room‐Temperature Crystallization of Amorphous Thin Films
Author(s) -
Ohsaki H.,
Shibayama Y.,
Kinbara A.,
Watanabe T.,
Fukuhisa K.,
Shinohara K.,
Nakajima A.
Publication year - 2004
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1831010
Subject(s) - crystallization , amorphous solid , materials science , thin film , plasma , substrate (aquarium) , amorphous metal , oxide , chemical engineering , oxygen , analytical chemistry (journal) , nanotechnology , metallurgy , chemistry , crystallography , chromatography , organic chemistry , physics , oceanography , quantum mechanics , geology , engineering
The crystallization of amorphous metal oxide thin films was achieved by RF plasma treatment. Although various amorphous films are crystallized after 3 minutes or so, the sample temperature is lower than 150 degrees C without compulsory cooling even when the films are treated for 1 hour. The oxygen gas pressure on the plasma treatment was found to be the key parameter on the crystallization. This treatment works on amorphous films of various materials, independently of the film preparation method and substrate materials.