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P‐34: A 5‐in. QQVGA CNT‐FED with a Glass‐Mesh Triode Driven by a‐Si TFT
Author(s) -
Song YoonHo,
Kim K. B.,
Hwang C.S.,
Lee S.H.,
Lee J.H.,
Choi I.S.,
Park J.H.
Publication year - 2004
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1830988
Subject(s) - triode , materials science , field emission display , field electron emission , carbon nanotube , cathode , anode , optoelectronics , flat panel display , active matrix , thin film transistor , voltage , nanotechnology , electron , capacitor , electrical engineering , electrode , engineering , chemistry , physics , quantum mechanics , layer (electronics)
Active‐matrix field emission display (AM‐FED) with a glass‐mesh gate plate was developed by using single‐wall carbon nanotube (CNT) as an electron emission source and a‐Si TFT as a control switch, respectively. The a‐Si TFT and screen‐printed CNT emitters were successfully integrated to fabricate the active‐matrix cathode. We fabricated the first prototype AM‐triode CNT FED panel with 5‐in. in diagonal and 160×3×120 subpixels through the vacuum packaging of the AM cathode, the glass‐mesh gate, and the anode. The fabricated AM‐CNT FED panel showed good uniformity, high stability and reliability, and high brightness with a driving voltage of below 15 V.