Premium
P‐12: A New a‐Si:H TFT Pixel Design Compensating Threshold Voltage Degradation of TFT and OLED
Author(s) -
Lee JaeHoon,
You BongHyun,
Nam WooJin,
Lee HyeJin,
Han MinKoo
Publication year - 2004
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1830965
Subject(s) - oled , thin film transistor , pixel , spice , active matrix , threshold voltage , materials science , optoelectronics , degradation (telecommunications) , diode , capacitor , amoled , voltage , electronic engineering , computer science , electrical engineering , transistor , engineering , artificial intelligence , nanotechnology , layer (electronics)
A new active matrix organic light emitting diode (AM‐OLED) pixel design, based on the a‐Si:H TFTs, is proposed and verified by SPICE simulations. The simulation results show that the proposed pixel, which consists of 7‐TFT and 1‐capacitor and 1‐additional signal line, compensates the problem of the threshold voltage degradation in the a‐Si:H TFT and OLED.