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P‐1: Dependence of Poly‐Si TFT Characteristics on Oxide Interface Traps and Grain Boundary Traps and its Application to Diagnosis of Fabrication Processes
Author(s) -
Kimura Mutsumi,
Abe Daisuke,
Inoue Satoshi,
Shimoda Tatsuya
Publication year - 2004
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1830954
Subject(s) - thin film transistor , grain boundary , fabrication , materials science , oxide , plasma , threshold voltage , transistor , voltage , optoelectronics , nanotechnology , electrical engineering , composite material , physics , layer (electronics) , metallurgy , medicine , microstructure , alternative medicine , engineering , pathology , quantum mechanics
Abstract The dependence of poly‐Si TFT characteristics on the density of oxide interface traps (Dit) and grain boundary traps (Dgb) has been analyzed. The subthreshold swing and threshold voltage mainly depend on Dit, while the transistor mobility depends on Dgb. It is found that oxygen plasma treatment reduces Dit, while plasma‐enhanced chemical‐vapor deposition of tetraethylorthosilicate for gate‐oxide generates Dgb.