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28.4: A Silver gate a‐Si TFT with buffer layers for Large‐Area AMLCDs
Author(s) -
Lee Sang Wook,
Choo Byung Kwon,
Kim Do Young,
Cho Kyu Sik,
Jang Jin
Publication year - 2002
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1830933
Subject(s) - materials science , thin film transistor , layer (electronics) , substrate (aquarium) , optoelectronics , buffer (optical fiber) , nitride , amorphous solid , silicon nitride , silicon , amorphous silicon , oxide thin film transistor , threshold voltage , transistor , nanotechnology , voltage , electrical engineering , crystalline silicon , chemistry , crystallography , oceanography , engineering , geology
We demonstrated a silver gate hydrogenated amorphous silicon thin film transistor(a‐Si:H TFT) using thin buffer layers of alumina(Al 2 O 3 ) and aluminum‐nitride(AlN). An Al 2 O 3 layer on glass substrate was deposited so as to increase adhesion between APC(> 98 wt% silver) and glass substate. An AlN layer on APC was deposited to prevent it from plasma damage during silicon‐nitride(SiNx) deposition. The Ag gate a‐Si:H TFT with these buffer layers exhibited a field‐effect mobility of 1.15 cm 2 /Vs, a gate voltage swing of 0.86 V/dec. and a threshold voltage of 2.5 V.
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