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P‐47: Fabrication and Characterization of Gated FEAs Using Carbon Nanotubes
Author(s) -
Jang YoonTaek,
Choi ChangHoon,
Ju ByeongKwon,
Lee YunHi,
Oh MyungHwan,
Min NamKi,
Ahn JinHo
Publication year - 2002
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1830808
Subject(s) - carbon nanotube , materials science , common emitter , characterization (materials science) , nanotechnology , fabrication , microwave , optoelectronics , thermal , computer science , medicine , alternative medicine , physics , pathology , meteorology , telecommunications
The gated field emitter using carbon nanotubes directly grown into submicron holes is advantageous for small area electron source, such as microwave generator, micro‐display. In order to realize better functions of the spindt‐type gated FEAs using CNTs directly grown into the submicron‐holes, we investigate freestanding CNTs grown on each micron‐sized Co dot without disturbing neighboring patterns and with not exceeding 2.5μm long by Thermal CVD.