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P‐43: The Modified Structure of Active‐matrix Cathode having Short‐failure Tolerance and Very Low Leakage Currents
Author(s) -
Hwang ChiSun,
Song Y.H.,
Cho Y.R.,
Ahn S.D.,
Kim B.C.,
Chung C.H.,
Kim D.H.,
Uhm H.S.,
Lee J. H.,
Cho K. I.
Publication year - 2002
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1830804
Subject(s) - common emitter , cathode , materials science , resistor , optoelectronics , active matrix , electrode , leakage (economics) , field electron emission , shield , transistor , electrical engineering , nanotechnology , thin film transistor , engineering , voltage , chemistry , physics , petrology , layer (electronics) , quantum mechanics , geology , electron , economics , macroeconomics
Abstract For the reliable operation in Active‐Matrix Field Emission Display (AMFED), the modification of the structure in field emitter cathode was proposed. A resistor bridge over field emitter gate electrode was added, which gave short‐failure tolerance to the cathode. A light‐shield electrode was also incorporated to minimize the off‐leakage current of active‐control transistor. The prototype AMFED composed of a‐Si TFT and Mo‐tip emitter array was fabricated and its operation was successfully demonstrated.