P‐6: A Design Robust Against Hot‐carrier Stress for Low‐temperature Poly‐Si TFT LCDs Fabricated using a 450°C Process | Zendy

Shiba Takeo | Zendy; Itoga Toshihiko | Zendy; Toyota Yoshiaki | Zendy; Ohkura Makoto | Zendy; Miyazawa Toshio | Zendy; Sakai Takeshi | Zendy

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P‐6: A Design Robust Against Hot‐carrier Stress for Low‐temperature Poly‐Si TFT LCDs Fabricated using a 450°C Process

Author(s) -

Shiba Takeo,

Itoga Toshihiko,

Toyota Yoshiaki,

Ohkura Makoto,

Miyazawa Toshio,

Sakai Takeshi

Publication year - 2002

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.1830235

Subject(s) - thin film transistor , materials science , optoelectronics , stress (linguistics) , substrate (aquarium) , degradation (telecommunications) , transistor , electronic engineering , composite material , electrical engineering , engineering , voltage , linguistics , philosophy , oceanography , layer (electronics) , geology

Degradation phenomena of low‐temperature poly‐Si thin film transistors (TFTs) under direct current (DC) and dynamic stress were thoroughly investigated, and a robust design was developed for TFT LCDs fabricated on a 730×920‐mm glass substrate using a 450°C process. A system‐in display capability having a stress immunity was also demonstrated.

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