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12.2: Large‐Area Poly‐Si on Glass by UV Scan Heating
Author(s) -
Kim Kyung Ho,
Park Seong Jin,
Cho Kyu Sik,
Sohn Woo Sung,
Jang Jin
Publication year - 2002
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1830218
Subject(s) - materials science , crystallization , amorphous silicon , amorphous solid , silicon , silicide , phase (matter) , analytical chemistry (journal) , crystallography , optoelectronics , chemical engineering , crystalline silicon , chemistry , organic chemistry , chromatography , engineering
The amorphous silicon (a‐Si)over 300 × 350 mm 2 could be completely crystallized by using silicide mediated crystallization (SMC)of a‐Si by means of UV scan heating. A‐Si having a 2.0 × 10 13 atoms/cm 2 Ni area density was crystallized in 10 minutes without having amorphous phase inside and the grain size was ∼20 μm. The field effect mobilities and threshold voltages of the p‐channel poly‐Si TFTs were 35 ∼ 40 cm 2 /Vs and 0.6 ∼ 0.7 V/dec, respectively, over 300 × 350 mm 2 .
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