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12.1: 45°C Low‐Temperature Poly‐Si TFT Fabrication Process Applicable to the Display Manufacturing Using 730×920mm 2 Glass Substrates
Author(s) -
Ohkura Makoto,
Shimomura Shigeo,
Miyazawa Toshio,
Itoga Toshihiko,
Shiba Takeo
Publication year - 2002
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1830217
Subject(s) - fabrication , materials science , substrate (aquarium) , crystallization , process (computing) , thin film transistor , dopant , optoelectronics , dopant activation , liquid crystal display , compaction , nanotechnology , composite material , chemical engineering , computer science , doping , engineering , medicine , oceanography , alternative medicine , pathology , layer (electronics) , geology , operating system
450°C low temperature poly‐Si TFT fabrication process is developed. The process without substrate compaction enables us to use non‐preannealed glass substrate. Major process improvements are on laser crystallization and dopant activation. The process is successfully applied to the manufacturing of the 2–3.5 inch LCD panels using 730×920mm 2 glass substrates.