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52.4L: Late‐News Paper: a‐Si:H TFT Active‐Matrix Phosphorescent OLED Pixel
Author(s) -
Nichols J. A.,
Jackson T. N.,
Lu M. H.,
Hack M.
Publication year - 2002
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1830201
Subject(s) - thin film transistor , oled , active matrix , materials science , optoelectronics , phosphorescence , transistor , threshold voltage , brightness , diode , pixel , oxide thin film transistor , amorphous silicon , silicon , voltage , electrical engineering , crystalline silicon , optics , nanotechnology , physics , engineering , layer (electronics) , fluorescence
We report a two‐transistor amorphous silicon (a‐Si:H) thin film transistor (TFT) active‐matrix organic light emitting diode (OLED) pixel using high‐efficiency phosphorescent OLED devices. The gate to source voltage (V GS ) for the OLED drive transistor is less than 8 V for a pixel brightness of 100 cd/m 2 and less than 12 V for 400 cd/m 2 . The low drive voltage is important for good TFT stability and display uniformity.