Premium
Current and future technology of low‐temperature poly‐Si TFT‐LCDs
Author(s) -
Oana Yasuhisa
Publication year - 2001
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1828784
Subject(s) - thin film transistor , materials science , optoelectronics , doping , annealing (glass) , transistor , flat panel display , thin film , engineering physics , electrical engineering , nanotechnology , voltage , composite material , physics , engineering , layer (electronics)
— The state of the art of large‐area low‐temperature TFT‐LCDs will be reported in this paper. High‐performance poly‐Si TFTs are expected to realize various applications such as system display where various signal‐processing functions are added to the display. In the past few years, low‐temperature poly‐Si thin‐film‐transistor (LTPS TFT) technology has made great progress, especially in the areas of excimer laser annealing (ELA) of high‐quality poly‐Si film, ion doping for large‐area doping, and high‐quality gate SiO 2 film formation by using the low‐temperature PE‐CVD method. Also, technology trends and possible applications, such as a system displays, will be discussed.