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ITO dry‐etching mechanism and its application in the fabrication of LCDs
Author(s) -
Takei H.,
Yasui Y.,
Mizuno K.,
Sakio S.,
Ishibashi S.
Publication year - 2001
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1828782
Subject(s) - dry etching , etching (microfabrication) , fabrication , materials science , plasma , plasma etching , reactive ion etching , dry gas , coaxial , optoelectronics , nanotechnology , analytical chemistry (journal) , chemistry , computer science , chromatography , physics , medicine , telecommunications , alternative medicine , layer (electronics) , pathology , quantum mechanics
— Based on HI gas‐plasma etching (high‐density plasma‐assisted RIE), the activation energy for an ITO dry‐etching reaction was obtained. The value was calculated 35–40 kJ/mol for 20 sec from the reaction starting time. The reaction dead time is characteristic of the ITO dry‐etching process, but the reaction is relatively simple. Therefore, ITO dry‐etching technology, based on HI gas plasma, is useful in the the fabrication of LCDs, and was used in a recently developed Multi‐Coaxial‐Plasma‐Source (MCPS) dry etcher.