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Materials optimization for semiconducting polymer LEDs and FETs
Author(s) -
Breemen A. J. J. M.,
Bastiaansen J. J. A. M.,
Langeveld B. M. W.,
Sweelssen J.,
Haare J. A. E. H.,
Herwig P. T.,
Hoekerd K. T.,
Schoo H. F. M.
Publication year - 2002
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1827843
Subject(s) - materials science , polymer , light emitting diode , doping , diode , electronic circuit , optoelectronics , transistor , active matrix , electronics , nanotechnology , oled , thin film transistor , composite material , electrical engineering , layer (electronics) , voltage , engineering
— Dye‐doped semiconducting polymers are used as active layers in polymer light‐emitting diodes (polyLEDs). The emission color can be tuned by doping the active polymer with certain dyes. This concept of energy transfer is demonstrated for a green matrix doped with a red‐emitting dye, suitable for use in LEDs. An absolute PL efficiency of 39% is observed for this system. Another very attractive development is taking place in the area of all‐polymer transistors. This may lead to a (partial) replacement of the driving electronics by all‐plastic circuits. A new precursor route toward poly(thienylenevinylene)s (PTVs), suitable as active material in all‐polymer integrated circuits, is presented. Synthesis of the precursors is reproducible and fast, and can readily be scaled for manufacture. Quantitative conversion of the precursor polymer can be accomplished by heating at 150°C for 20 min. The resulting mobility (6 × 10 −3 cm 2 /V‐sec) and ON‐OFF ratio (4 × 10 4 ) makes this material a suitable candidate for the development and large‐scale manufacturing of all‐polymer integrated circuits.