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Development of a new design simulator for poly‐Si TFTs to optimize the lightly doped drain structure
Author(s) -
Nanno Yutaka,
Senda Kohji,
Tsutsu Hiroshi,
Uchiike Heiju
Publication year - 2002
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1827831
Subject(s) - materials science , doping , sheet resistance , optoelectronics , computer science , simulation , composite material , layer (electronics)
— A new design simulator to simulate the characteristics of poly‐Si TFTs taking into account its physical structure was developed. By using the simulator, we can optimize the length and the sheet resistance of the LDD region in order to obtain sufficient ON currents and to suppress OFF currents under both dark and illuminated conditions.