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27.1: MICC Poly‐Si TFTs for AMLCDs
Author(s) -
Son Yong Duck,
Kim Hyo Jun,
Hur Ji Ho,
Lee Jin Soo,
Choi Jong Hyun,
Kim Jin O.,
Choo Byung Kwon,
Park Kyu Chang,
Choi Dong Kyu,
Maghsoodi S.,
Warner R. R.,
Cerny G. A.,
Jang Jin
Publication year - 2004
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1825809
Subject(s) - materials science , passivation , crystallization , polycrystalline silicon , silicon , layer (electronics) , crystallite , optoelectronics , chemical mechanical planarization , metallurgy , nanotechnology , chemical engineering , thin film transistor , engineering
A novel LTPS method called MICC (metal‐induced crystallization using a cap) is introduced. The role of cap layer on a‐Si is the control of the nickel concentration for inducing crystallization as well as the passivation of the surface during thermal process for crystallization. Circular grain growth can be seen, due to lateral grain growth from a seed. Polycrystalline silicon with large grain and smooth surface can be achieved by MICC. We fabricated a AMLCD with high aperture ratio of 80 % using silicon‐based spin‐on low‐K dielectrics as a planarization layer.