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57.2: Extreme AMOLED Backplanes in a‐Si with Proven Stability
Author(s) -
Nathan Arokia,
Alexander Stefan,
Sakariya Kapil,
Servati Peyman,
Tao Sheng,
Striakhilev Denis,
Kumar Anil,
Sambandan Sanjiv,
Jafarabadiashtiani Shahin,
Vigranenko Yuri,
Church Corbin,
Wzorek Jay,
Arsenault Paul
Publication year - 2004
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1825780
Subject(s) - amoled , backplane , materials science , oled , optoelectronics , compensation (psychology) , pixel , thin film transistor , electrical engineering , active matrix , optics , nanotechnology , engineering , layer (electronics) , physics , psychology , psychoanalysis
Abstract Instability has long been a barrier to the use of a‐Si AMOLED backplanes. We present here the first demonstration of proven stability of a‐Si AMOLED pixels. Over 7000h of stability data is shown for pixel circuits that compensate for threshold‐voltage shift, temperature, and OLED degradation (extreme compensation). This demonstrates that stable AMOLED backplanes are achievable using well‐established and proven a‐Si TFT technology in mainstream use by the flat panel display industry.