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33.4: An Improvement Process for Gate Oxide of LTPS TFT by Using N 2 O Plasma Nitridation
Author(s) -
Chou LinEn,
Ting HungChe
Publication year - 2004
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1825714
Subject(s) - thin film transistor , materials science , plasma , polycrystalline silicon , oxide , optoelectronics , fabrication , throughput , silicon , nanotechnology , computer science , metallurgy , layer (electronics) , operating system , physics , medicine , alternative medicine , quantum mechanics , pathology , wireless
In this work, the nitridation effects for the gate oxide of low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) by using N 2 O plasma were presented. According to the experiments and discussions in this paper, it was believed that the incorporation of nitrogen atoms into SiO 2 /Si interface was responsible for the improved quality of the oxide. Therefore we used N 2 O plasma instead of thermal and NH 3 nitridation to get better performance of LTPS TFTs. Furthermore, the N 2 O plasma nitridation process also had advantages of the higher throughput and yield in LTPS TFTs fabrication.