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Characteristics and stability of improved re‐crystallized metal‐induced laterally crystallized polycrystalline‐silicon thin‐film transistors for display applications
Author(s) -
Wong Man,
Meng Zhiguo,
Shi Xuejie
Publication year - 2003
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1825691
Subject(s) - materials science , thin film transistor , polycrystalline silicon , optoelectronics , silicon , transistor , crystallite , nickel , threshold voltage , thin film , voltage , nanotechnology , electrical engineering , metallurgy , layer (electronics) , engineering
— The performance of high‐temperature re‐crystallized (RC) metal‐induced laterally crystallized (MILC) polycrystalline‐silicon (poly‐Si) thin‐film transistors (TFT) have been improved by (1) patterning the active islands before MILC, (2) removing nickel‐containing residues using acid cleaning, (3) using heavily boron‐doped poly‐Si gates to achieve threshold voltage symmetry, and (4) double‐implanting n‐type source/drain junctions. A 30‐MHz driver circuit based on this improved technology was demonstrated. The reliability of optimized RC‐MILC poly‐Si TFTs has not been adversely affected by residual nickel‐containing contaminants in the TFT channel regions.