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High‐performance thin‐film transistor using silicide‐mediated crystallization
Author(s) -
Kim Kyung Ho,
Park Seong Jin,
Jang Jin
Publication year - 2003
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1825689
Subject(s) - materials science , crystallization , polycrystalline silicon , silicide , thin film transistor , amorphous silicon , grain size , crystallite , amorphous solid , silicon , phase (matter) , optoelectronics , composite material , chemical engineering , crystallography , metallurgy , crystalline silicon , chemistry , layer (electronics) , organic chemistry , engineering
— We studied the silicide‐mediated crystallization of a‐Si for low‐temperature polycrystalline‐silicon (LTPS) on glass. By controling the heating method and Ni density on the a‐Si, the grain size could be increased to 40 μm. Radial grain growth from a NiSi 2 crystalline nucleus gives rise to a large‐grain poly‐Si without amorphous phase inside. A field‐effect mobility of over 200 cm 2 /V‐sec was achieved by using LTPS.