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Characteristics of aluminum oxinitride film grown by plasma‐enhanced atomic layer deposition as the insulator of an electroluminescent device
Author(s) -
Lim Jung Wook,
Yun Sun Jin,
Lee Jin Ho
Publication year - 2003
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1825682
Subject(s) - atomic layer deposition , dielectric , electroluminescence , materials science , insulator (electricity) , optoelectronics , plasma , aluminium , annealing (glass) , breakdown voltage , high κ dielectric , thin film , deposition (geology) , layer (electronics) , voltage , composite material , nanotechnology , electrical engineering , paleontology , engineering , quantum mechanics , sediment , biology , physics
— It is important to select an optimal insulator for an electroluminescent (EL) device, and this insulator have a large dielectric constant, large breakdown field, and few defects. Generally, an insulator with a high dielectric constant shows a considerably low breakdown field; however, none of them should be abandoned. Therefore, it is required that insulators with high breakdown fields should be developed without lowering the dielectric constant. In this article, we present aluminum oxinitride films grown by plasma‐enhanced atomic layer deposition (PEALD). The dielectric breakdown field of this film is considerably higher than that of alumina grown by conventional atomic layer deposition (ALD), and this film is also more stable than alumina grown by PEALD as well as by ALD after post‐annealing process. Furthermore, aluminum oxinitride films, grown by PEALD as the upper insulator of a ZnS:Mn‐based EL device, shows an excellent long‐lasting property for an applied voltage and a reasonable luminance.