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V t Compensated voltage‐data a‐Si TFT AMOLED pixel circuits
Author(s) -
Sanford James L.,
Libsch Frank R.
Publication year - 2004
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1824241
Subject(s) - amoled , thin film transistor , active matrix , electronic circuit , oled , materials science , transistor , threshold voltage , luminance , optoelectronics , pixel , voltage , computer science , diode , electrical engineering , artificial intelligence , engineering , nanotechnology , layer (electronics)
Abstract— Active‐matrix organic light‐emitting‐diode (AMOLED) displays are now entering the marketplace. The use of a thin‐film‐transistor (TFT) active matrix allows OLED displays to be larger in size, higher in resolutions and lower in power dissipation than is possible using a conventional passive matrix. A number of TFT active‐matrix pixel circuits have been developed for luminance control, while correcting for initial and electrically stressed TFT parameter variations. Previous circuits and driving methods are reviewed. A new driving method is presented in which the threshold‐voltage ( V t ) compensation performance, along with various circuit improvements for amorphous‐silicon (a‐Si) TFT pixel circuits using voltage data, are discussed. This new driving method along with various circuit improvements is demonstrated in a state‐of‐the‐art 20‐in. a‐Si TFT AMOLED HDTV.