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Microcrystalline silicon: An emerging material for stable thin‐film transistors
Author(s) -
Roca i Cabarrocas P.,
Kasouit S.,
Kalache B.,
Vanderhaghen R.,
Bonnassieux Y.,
Elyaakoubi M.,
French I.
Publication year - 2004
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1824232
Subject(s) - materials science , thin film transistor , microcrystalline , optoelectronics , dielectric , silane , transistor , layer (electronics) , silicon , gate dielectric , thin film , hydrogen , nanotechnology , electrical engineering , composite material , voltage , crystallography , engineering , organic chemistry , chemistry
— Top‐gate and bottom‐gate microcrystalline‐silicon thin‐film transistors (TFTs) have been produced at low temperature (150–250°C) by the standard radio‐frequency glow‐discharge technique using three preparation methods: the hydrogen dilution of silane in hydrogen, the layer‐by‐layer technique, and the use of SiF 4 ‐Ar‐H 2 feedstock. In all cases, a stable top‐gate TFT with mobility values around 1 cm 2 /V‐sec have been achieved, making them suitable for basic circuit on glass applications. Moreover, the use of SiF 4 gas combined with specific plasma treatments of the a‐SiN:H dielectric produces large columns, even at the interface with the dielectric. This leads to stable bottom‐gate TFTs, fully compatible with today's a‐Si:H production facilities, reaching mobility values up to 3 cm 2 /V‐sec. These devices are an interesting alternative to laser‐crystallized polysilicon thin films in a growing number of applications.