Premium
3.2: Integrated a‐Si Gate Driver Circuit for TFT‐LCD Panel
Author(s) -
Jeon Jin,
Choo KyoSeop,
Lee WonKyu,
Song JunHo,
Kim HyungGuel
Publication year - 2004
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.1811444
Subject(s) - thin film transistor , gate driver , liquid crystal display , materials science , driver circuit , optoelectronics , capacitance , parasitic capacitance , integrated circuit , electrical engineering , electronic engineering , engineering , voltage , nanotechnology , layer (electronics) , physics , electrode , quantum mechanics
We developed an a‐Si TFT‐LCD panel with integrated gate driver circuit using a standard 5‐MASK process. To minimize the effect of the a‐Si TFT current and LC's capacitance variation with temperature, we developed a new a‐Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3‐side free panel structure in a‐Si TFT‐LCD of QVGA(240*320) resolution.