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Near‐infrared‐emitting ZnS: Er and ZnS(Se): Cr TFEL devices
Author(s) -
Vlasenko N. A.,
Denisova Z. L.,
Kots Ya. F.,
Veligura L. I.,
Tsyrkunov Yu. A.
Publication year - 2004
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1811441
Subject(s) - electroluminescence , materials science , optoelectronics , infrared , diode , light emitting diode , near infrared spectroscopy , optics , nanotechnology , physics , layer (electronics)
— Electroluminescent near‐infrared (NIR) emitters are of interest in creating special displays for applications such as communications, chemical sensoring, friend‐and‐foe identification, aligning and checking systems that detect NIR radiation, medicine, etc. By performing this research, known NIR emitters (thermal sources, semiconductor diodes and lasers, and solid‐state lasers) were supplemented by NIR‐emitting TFEL devices based on ZnS: Er(F) and ZnS(Se): Cr electron‐beam‐evaporated films. Some characteristics of these devices as NIR emitters are given. There are two narrow intensive bands at ∼ 980 and ∼1530 nm in the emission spectrum of ZnS: Er(F) TFEL devices. The broadband emission is the range of from 1.8 μm up to 2.7 μm takes place in the ZnS(Se): Cr devices. The wavelength of the peak emission can be varied owing to interference. The mechanism of electroluminescence in the ZnS: Er(F) and ZnS(Se): Cr devices is the direct impact excitation of Er 3+ and Cr 2+ ions, respectively.