Open AccessOn Optimization of Manufacturing of a Injection-Locked Frequency Divider based on Heterostructures to Increase Density of Their Elements. Influence of Mismatch-Induced Stress and Porosity of Materials on Technological Process
Author(s) -
E. L. Pankratov,
AUTHOR_ID
Publication year - 2021
Publication title -
journal of materials science and engineering with advanced technology
Language(s) - English
Resource type - Journals
ISSN - 0976-1446
DOI - 10.18642/jmseat_7100122165
Subject(s) - heterojunction , materials science , dopant , stress (linguistics) , transistor , optoelectronics , porosity , doping , frequency divider , electronic engineering , electrical engineering , voltage , engineering , composite material , cmos , linguistics , philosophy
In this paper, we introduce an approach to increase density of field-effect transistors framework a injection-locked frequency divider. Framework the approach, we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.