Open AccessOn Prognosis of Manufacturing of an Enhanced Swing Differential Colpitts Oscillator Based on Heterostructures to Increase Density of Their Elements: Influence of Mismatch-Induced Stress
Author(s) -
E. L. Pankratov,
AUTHOR_ID
Publication year - 2020
Publication title -
journal of materials science and engineering with advanced technology
Language(s) - English
Resource type - Journals
ISSN - 0976-1446
DOI - 10.18642/jmseat_7100122146
Subject(s) - colpitts oscillator , heterojunction , dopant , swing , materials science , optoelectronics , stress (linguistics) , doping , electronic engineering , electrical engineering , vackář oscillator , voltage controlled oscillator , physics , engineering , acoustics , voltage , linguistics , philosophy
In this paper, we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.