Open AccessINFLUENCE OF GRAPHITE FILM THICKNESS ON ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF GRAPHITE/n-Si SCHOTTKY-TYPE HETEROJUNCTION
Author(s) -
S. I. Kuryshchuk,
A. I. Mostovyi,
I. P. Koziarskyi,
М. Н. Солован
Publication year - 2022
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2022.3.265294
Subject(s) - schottky diode , materials science , diode , optoelectronics , photoelectric effect , responsivity , heterojunction , graphite , photodiode , schottky barrier , wafer , rectification , silicon , photodetector , composite material , electrical engineering , voltage , engineering
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