Open AccessDEPENDENCE OF MAXIMAL SENSITIVITY OF THE MAGNETIC FIELD HALL SENSORS BASED ON GRAPHENE ON TEMPERATURE
Author(s) -
І. Bolshakova,
М. В. Стріха,
Ya. Kost,
F. Shurygin,
Y. Mykhashchuk,
Z. Wang,
Daniel Neumaier
Publication year - 2021
Publication title -
sensorna elektronìka ì mìkrosistemnì tehnologìï
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2021.3.241056
Subject(s) - graphene , sensitivity (control systems) , hall effect sensor , materials science , hall effect , magnetic field , atmospheric temperature range , condensed matter physics , silicon , nuclear magnetic resonance , optoelectronics , nanotechnology , physics , magnet , electronic engineering , thermodynamics , quantum mechanics , engineering
A theory of graphene-based magnetic field Hall sensors sensitivity dependence on temperature is summarized. The existence of low-temperature range with sensitivity, almost independent on temperature, is predicted; at higher temperatures, when thermally-induced carrier concentration in graphene prevails, the sensitivity decreases with temperature. The experimental studies of the temperature dependence of magnetic sensitivity of Hall sensors on single layer graphene base were carried in temperature range from 300 °K to 430 °K. The values of sensitivity, obtained for room temperatures ~ 230 V·А‑1·Т‑1 exceed essentially the maximum sensitivity of the traditional Hall sensors on silicon base ~ 100 V·А‑1·Т‑1.