
ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF SCHOTTKY DIODES GRAPHITE/n-Si PREPARED BY THE PENCIL-ON-SEMICONDUCTOR METHOD
Author(s) -
П. Д. Марьянчук,
Mykhailo M. Solovan,
T. T. Kovalyuk,
Андрій Ігорович Мостовий,
Марія Миколаївна Грицюк
Publication year - 2020
Publication title -
sensorna elektronìka ì mìkrosistemnì tehnologìï
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2020.4.216146
Subject(s) - schottky diode , materials science , semiconductor , diode , optoelectronics , photoelectric effect , heterojunction , schottky barrier , graphite , dark current , quantum tunnelling , photodetector , composite material