
PHYSICS OF NANOTRANSISTORS: LANDAUER – DATTA – LUNDSTROM TRANSPORT MODEL AND BALLISTIC MOSFET
Author(s) -
Ю. О. Кругляк,
М. В. Стріха
Publication year - 2019
Publication title -
sensorna elektronìka ì mìkrosistemnì tehnologìï
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2019.4.189020
Subject(s) - mosfet , ballistic conduction , physics , line (geometry) , statistical physics , quantum mechanics , voltage , mathematics , transistor , electron , geometry