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PHYSICS OF NANOTRANSISTORS: MOSFET THEORY IN TRADITIONAL APPROACH, ZERO LEVEL VIRTUAL SOURCE MODEL, AND DEPLETION APPROXIMATION
Author(s) -
Ю. О. Кругляк,
М. В. Стріха
Publication year - 2019
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2019.1.159485
Subject(s) - physics , mosfet , electrostatics , subthreshold conduction , saturation (graph theory) , point (geometry) , line (geometry) , voltage , computer science , electrical engineering , statistical physics , transistor , quantum mechanics , geometry , mathematics , engineering , combinatorics

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