ABOUT PERFORMANCE LINEARITY OF THE ENVIRONMENT GAS HUMIDITY CAPACITIVE SENSORS BASED ON SILICON MOS STRUCTURES WITH A NANODIMENSIONAL SILICON OXIDE
Author(s) -
П. П. Фастиковський,
М. А. Глауберман
Publication year - 2015
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2015.4.107793
Subject(s) - humidity , silicon , linearity , materials science , wafer , relative humidity , oxide , optoelectronics , capacitive sensing , capacitance , silicon oxide , composite material , electrical engineering , chemistry , meteorology , silicon nitride , electrode , physics , metallurgy , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom